A shift to 12-inch photomasks aims to cut costs, but full production readiness is set for 2033.
TSMC announced a collaborative initiative with ASML to lead the semiconductor industry toward a larger-format Extreme Ultraviolet lithography photomask. The plan transitions chip production from current 6-inch masks to 12-inch masks to eliminate stitching constraints and lower advanced manufacturing costs.
Marco Pieters, chief technology officer of ASML, told Reuters that the successful rollout of the larger format would raise the productivity of High-NA EUV systems by 40%. The shift helps address optical limitations in current High-NA designs, where smaller exposure fields require complex split patterning for larger chips.
The timeline spans several years. TSMC intends to adopt ASML's $400 million High-NA EUV machines for advanced nodes starting in 2030, initially using 6-inch masks. A pilot line for the 12-inch format is expected in 2031, with full production readiness targeted for 2033.
We expect the adoption of High NA EUV to increase progressively along the device scaling roadmap, first using current 6-inch masks and then further supported by 12-inch masks, which enable greater scanner productivity and allow the industry to meet the demand for smaller, faster and more energy-efficient chips.
Institutional interest in the foundry remains solid. Data tracking more than 1,000 funds showed 249 hedge funds held TSMC shares at the end of the second quarter, up from 234 in the previous quarter. Over the same timeframe, hedge funds holding ASML rose from 133 to 140.
Share prices can rise and fall. Past performance does not guarantee future results. This article is news, not investment advice.
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